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Electrical and photoelectrical properties of CuInS2-ZnIn2S4 solid solutions

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Electrical and photoelectrical properties of CuInS2-ZnIn2S4 solid solutions

Auteurs : RBID : Pascal:13-0127929

Descripteurs français

Pascal (Inist)
- Piégeage porteur charge, Dépôt phase liquide, Conductivité type n, Effet température, Conductivité électrique, Photoconductivité, Conduction saut, Défaut, Sulfure de cuivre, Sulfure d'indium, Solution solide, Semiconducteur, Sulfure de zinc, CuInS2, Saut à distance variable.

English descriptors

KwdEn :
- Charge carrier trapping, Copper sulfide, Defects, Electrical conductivity, Hopping conduction, Indium sulfide, Liquid phase deposition, N type conductivity, Photoconductivity, Semiconductor materials, Solid solutions, Temperature effects, Zinc sulfide.

Abstract

We have investigated CuInS₂-ZnIn₂S₄ solid alloys containing 4, 8, and 12 mol% ZnIn₂S₄. The samples with 16 mol% ZnIn₂S₄ were two component ones. The materials were prepared by the liquid phase deposition method, and had demonstrated n-type conductivity. Temperature dependencies of their electrical conductivity and thermally stimulated currents were investigated in the temperature region from 27 K to 300 K. Their photoconductivity spectral distributions of were analysed at T ≃ 30 K. In the crystals with 8-12 mol% of ZnIn₂S₄ the induced photoconductivity phenomenon was observed. It was explained on the basis of the two trapping centre model. In the low temperature region conductivity behaviour could be explained on the basis of the Variable Range Hopping model.

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Pascal:13-0127929

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical and photoelectrical properties of CuInS<sub>2</sub>
-ZnIn<sub>2</sub>
S<sub>4</sub>
 solid solutions</title>
<author><name sortKey="Bozhko, V V" uniqKey="Bozhko V">V. V. Bozhko</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lesya Ukrainka Volyn National University, av. Voli 13</s1>
<s2>Lutsk</s2>
<s3>UKR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
<wicri:noRegion>Lutsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Novosad, A V" uniqKey="Novosad A">A. V. Novosad</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lesya Ukrainka Volyn National University, av. Voli 13</s1>
<s2>Lutsk</s2>
<s3>UKR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
<wicri:noRegion>Lutsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Davidyuk, G E" uniqKey="Davidyuk G">G. E. Davidyuk</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lesya Ukrainka Volyn National University, av. Voli 13</s1>
<s2>Lutsk</s2>
<s3>UKR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
<wicri:noRegion>Lutsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kozer, V R" uniqKey="Kozer V">V. R. Kozer</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lesya Ukrainka Volyn National University, av. Voli 13</s1>
<s2>Lutsk</s2>
<s3>UKR</s3>
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<sZ>2 aut.</sZ>
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</author>
<author><name sortKey="Parasyuk, O V" uniqKey="Parasyuk O">O. V. Parasyuk</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lesya Ukrainka Volyn National University, av. Voli 13</s1>
<s2>Lutsk</s2>
<s3>UKR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<sZ>5 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
<wicri:noRegion>Lutsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Vainorius, N" uniqKey="Vainorius N">N. Vainorius</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Semiconductor Physics Department and Institute of Applied Research of Vilnius University, Saule========dot;tekio al. 9/3</s1>
<s2>LT 10222, Vilnius</s2>
<s3>LTU</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>LT 10222, Vilnius</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Janonis, V" uniqKey="Janonis V">V. Janonis</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Semiconductor Physics Department and Institute of Applied Research of Vilnius University, Saule========dot;tekio al. 9/3</s1>
<s2>LT 10222, Vilnius</s2>
<s3>LTU</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>LT 10222, Vilnius</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sakavicius, A" uniqKey="Sakavicius A">A. Sakavicius</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Semiconductor Physics Department and Institute of Applied Research of Vilnius University, Saule========dot;tekio al. 9/3</s1>
<s2>LT 10222, Vilnius</s2>
<s3>LTU</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>LT 10222, Vilnius</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kazukauskas, V" uniqKey="Kazukauskas V">V. Kazukauskas</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Semiconductor Physics Department and Institute of Applied Research of Vilnius University, Saule========dot;tekio al. 9/3</s1>
<s2>LT 10222, Vilnius</s2>
<s3>LTU</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>LT 10222, Vilnius</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0127929</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0127929 INIST</idno>
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<idno type="wicri:Area/Main/Corpus">001068</idno>
<idno type="wicri:Area/Main/Repository">000E01</idno>
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<seriesStmt><idno type="ISSN">0925-8388</idno>
<title level="j" type="abbreviated">J. alloys compd.</title>
<title level="j" type="main">Journal of alloys and compounds</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge carrier trapping</term>
<term>Copper sulfide</term>
<term>Defects</term>
<term>Electrical conductivity</term>
<term>Hopping conduction</term>
<term>Indium sulfide</term>
<term>Liquid phase deposition</term>
<term>N type conductivity</term>
<term>Photoconductivity</term>
<term>Semiconductor materials</term>
<term>Solid solutions</term>
<term>Temperature effects</term>
<term>Zinc sulfide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Piégeage porteur charge</term>
<term>Dépôt phase liquide</term>
<term>Conductivité type n</term>
<term>Effet température</term>
<term>Conductivité électrique</term>
<term>Photoconductivité</term>
<term>Conduction saut</term>
<term>Défaut</term>
<term>Sulfure de cuivre</term>
<term>Sulfure d'indium</term>
<term>Solution solide</term>
<term>Semiconducteur</term>
<term>Sulfure de zinc</term>
<term>CuInS2</term>
<term>Saut à distance variable</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We have investigated CuInS<sub>2</sub>
-ZnIn<sub>2</sub>
S<sub>4</sub>
 solid alloys containing 4, 8, and 12 mol% ZnIn<sub>2</sub>
S<sub>4</sub>
. The samples with 16 mol% ZnIn<sub>2</sub>
S<sub>4</sub>
 were two component ones. The materials were prepared by the liquid phase deposition method, and had demonstrated n-type conductivity. Temperature dependencies of their electrical conductivity and thermally stimulated currents were investigated in the temperature region from 27 K to 300 K. Their photoconductivity spectral distributions of were analysed at T ≃ 30 K. In the crystals with 8-12 mol% of ZnIn<sub>2</sub>
S<sub>4</sub>
 the induced photoconductivity phenomenon was observed. It was explained on the basis of the two trapping centre model. In the low temperature region conductivity behaviour could be explained on the basis of the Variable Range Hopping model.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Electrical and photoelectrical properties of CuInS<sub>2</sub>
-ZnIn<sub>2</sub>
S<sub>4</sub>
 solid solutions</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>BOZHKO (V. V.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>NOVOSAD (A. V.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>DAVIDYUK (G. E.)</s1>
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<fA11 i1="04" i2="1"><s1>KOZER (V. R.)</s1>
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<fA11 i1="05" i2="1"><s1>PARASYUK (O. V.)</s1>
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<fA11 i1="06" i2="1"><s1>VAINORIUS (N.)</s1>
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<fA11 i1="07" i2="1"><s1>JANONIS (V.)</s1>
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<fA11 i1="08" i2="1"><s1>SAKAVICIUS (A.)</s1>
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<fA11 i1="09" i2="1"><s1>KAZUKAUSKAS (V.)</s1>
</fA11>
<fA14 i1="01"><s1>Lesya Ukrainka Volyn National University, av. Voli 13</s1>
<s2>Lutsk</s2>
<s3>UKR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Semiconductor Physics Department and Institute of Applied Research of Vilnius University, Saule========dot;tekio al. 9/3</s1>
<s2>LT 10222, Vilnius</s2>
<s3>LTU</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
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</fA66>
<fC01 i1="01" l="ENG"><s0>We have investigated CuInS<sub>2</sub>
-ZnIn<sub>2</sub>
S<sub>4</sub>
 solid alloys containing 4, 8, and 12 mol% ZnIn<sub>2</sub>
S<sub>4</sub>
. The samples with 16 mol% ZnIn<sub>2</sub>
S<sub>4</sub>
 were two component ones. The materials were prepared by the liquid phase deposition method, and had demonstrated n-type conductivity. Temperature dependencies of their electrical conductivity and thermally stimulated currents were investigated in the temperature region from 27 K to 300 K. Their photoconductivity spectral distributions of were analysed at T ≃ 30 K. In the crystals with 8-12 mol% of ZnIn<sub>2</sub>
S<sub>4</sub>
 the induced photoconductivity phenomenon was observed. It was explained on the basis of the two trapping centre model. In the low temperature region conductivity behaviour could be explained on the basis of the Variable Range Hopping model.</s0>
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</fC02>
<fC02 i1="02" i2="3"><s0>001B70B40</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Piégeage porteur charge</s0>
<s5>02</s5>
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<fC03 i1="01" i2="X" l="ENG"><s0>Charge carrier trapping</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Captura portador carga</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Dépôt phase liquide</s0>
<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Effet température</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Temperature effects</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Photoconductivité</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Photoconductivity</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Conduction saut</s0>
<s5>10</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Hopping conduction</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Défaut</s0>
<s5>11</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Defects</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Sulfure de cuivre</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Copper sulfide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Cobre sulfuro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Sulfure d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Solution solide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Solid solutions</s0>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Sulfure de zinc</s0>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Zinc sulfide</s0>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Zinc sulfuro</s0>
<s5>19</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>CuInS2</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Saut à distance variable</s0>
<s4>INC</s4>
<s5>63</s5>
</fC03>
<fN21><s1>105</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Electrical and photoelectrical properties of CuInS2-ZnIn2S4 solid solutions

Electrical and photoelectrical properties of CuInS2-ZnIn2S4 solid solutions

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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